Dirac Fermions induced in strained zigzag phosphorus nanotubes and the applications in field effect transistors

摘要

In this work, Dirac fermions have been obtained and engineered inone-dimensional (1D) zigzag phosphorus nanotubes (ZPNTs). We have performed acomprehensive first-principle computational study of the electronic propertiesof ZPNTs with various diameters. The results indicate that as the latticeparameter (Lc) along axial direction increases, ZPNTs undergo transitions frommetal to semimetal and semimetal to semiconductor, whereas Dirac fermionsappear at Lc ranging from 3.90{\AA} to 4.10{\AA}. In particular, a field effecttransistor (FET) based on a 12-ZPNT (with 12 unit cells in transversedirection) exhibits semiconductor behaviors with efficient gate-effectmodulation at Lc= 4.60{\AA}. However, only weak gate modulation is demonstratedwhen the nanotube becomes semimetal at Lc= 4.10{\AA}. This study indicates thatZPNTs are profoundly appealing in applications in the strain sensors. Ourfindings pave the way for development of high-performance strain-engineeredelectronics based on Dirac Fermions in 1D materials.